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Creators/Authors contains: "Majumdar, Arun"

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  1. Understanding and characterizing the intrinsic properties of charge carrier transport across the interfaces in van der Waals heterostructures is critical to their applications in modern electronics, thermoelectrics, and optoelectronics. However, there are very few published cross-plane resistivity measurements of thin samples because these inherently 2-probe measurements must be corrected for contact and lead resistances. Here, we present a method to extract contact resistances and metal lead resistances by fitting the width dependence of the contact end voltages of top and bottom electrodes of different linewidths to a model based on current crowding. These contributions are then subtracted from the total 2-probe cross-plane resistance to obtain the cross-plane resistance of the material itself without needing multiple devices and/or etching steps. This approach was used to measure cross-plane resistivities of a (PbSe)1(VSe2)1 heterostructure containing alternating layers of PbSe and VSe2 with random in-plane rotational disorder. Several samples measured exhibited a 4 order of magnitude difference between cross-plane and in-plane resistivities over the 6–300 K temperature range. We also reported the first observation of charge density wave transition in the cross-plane transport of (PbSe)1(VSe2)1 heterostructure. The device fabrication process is fully lift-off compatible, and the method developed enables the straightforward measurement of the resistivity anisotropy of most thin film materials with nm thicknesses. 
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  2. Abstract Stabilization of topological spin textures in layered magnets has the potential to drive the development of advanced low-dimensional spintronics devices. However, achieving reliable and flexible manipulation of the topological spin textures beyond skyrmion in a two-dimensional magnet system remains challenging. Here, we demonstrate the introduction of magnetic iron atoms between the van der Waals gap of a layered magnet, Fe3GaTe2, to modify local anisotropic magnetic interactions. Consequently, we present direct observations of the order-disorder skyrmion lattices transition. In addition, non-trivial topological solitons, such as skyrmioniums and skyrmion bags, are realized at room temperature. Our work highlights the influence of random spin control of non-trivial topological spin textures. 
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    Free, publicly-accessible full text available December 1, 2025
  3. null (Ed.)
    For any successful business endeavor, recruitment of a required number of appropriately qualified employees in proper positions is a key requirement. For effective utilization of human resources, reorganization of such workforce assignment is also a task of utmost importance. This includes situations when the under-performing employees have to be substituted with fresh applicants. Generally, the number of candidates applying for a position is large, and hence, the task of identifying an optimal subset becomes critical. Moreover, a human resource manager would also like to make use of the opportunity of retirement of employees to improve manpower utilization. However, the constraints enforced by the security policies prohibit any arbitrary assignment of tasks to employees. Further, the new employees should have the capabilities required to handle the assigned tasks. In this article, we formalize this problem as the Optimal Recruitment Problem (ORP), wherein the goal is to select the minimum number of fresh employees from a set of candidates to fill the vacant positions created by the outgoing employees, while ensuring satisfiability of the specified security conditions. The model used for specification of authorization policies and constraints is Attribute-Based Access Control (ABAC), since it is considered to be the de facto next-generation framework for handling organizational security policies. We show that the ORP problem is NP-hard and propose a greedy heuristic for solving it. Extensive experimental evaluation shows both the effectiveness and efficiency of the proposed solution. 
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  4. null (Ed.)